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15 Off Si

15 Off Si

  in this paper, metal organic molecular beam epitaxy (mombe) growth of ersio nanostructured crystalline films on 15 off si(1 0 0) substrates at 900 c are demonstrated. Tetra ethoxy silane (teos) and 2,2,6,6-tetra methyl-3,5-octane dionat erbium (er(tmod) 3) were used as si-o and er-o precursors, respectively.

In this paper, metal organic molecular beam epitaxy (mombe) growth of ersio nanostructured crystalline films on 15 off si(1 0 0) substrates at 900 c are demonstrated.

25 strained layers using a wide range of deposition times, 602400 s, at 600 c on laser textured substrates with miscuts 15 off si(001). Ripple-shaped morphologies form spontaneously on miscuts along the 110 directions. At the shortest deposition times, roughening is suppressed as predicted by a linear stability analysis that.

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15 Off Si

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Erbium dinickel disilicide, ErNi2Si2 | Request PDF

Show full abstract nanostructured crystalline films on 15 off si(1 0 0) substrates at 900 c are demonstrated. Tetra ethoxy silane (teos) and 2,2,6,6-tetra methyl-3,5-octane dionat erbium (er.).

15 Off Si

15 off si(oo1)) in the island formation regime a substrate tempera- ture of 600 k, a deposition rate of about 30 monolayers per minute and a total deposited amount of approximately 3000 monolayers were selected. - for the second samples which were grown in the step flow mode (on a 0. 52 off si(oo1) sub- strate) these parameters were respectively a sub.